发明名称 Method of forming transparent, conductive film, method of compensating defective region of semiconductor layer, photovoltaic element, and method of producing photovoltaic element
摘要 Provided is a method of forming a transparent, conductive film on a semiconductor layer formed on a substrate, by sputtering, wherein voltages are applied independently of each other to both a target and the substrate, respectively, and a bias voltage appearing in the substrate is controlled so as to form the transparent, conductive film on only a portion except for a defective region of the semiconductor layer, thereby restraining shunting of the transparent, conductive film and achieving excellent appearance thereof. Also provided are a defective region compensation method of a semiconductor layer, a photovoltaic element, and a method of producing the photovoltaic element.
申请公布号 US6716324(B2) 申请公布日期 2004.04.06
申请号 US20020058802 申请日期 2002.01.30
申请人 CANON KABUSHIKI KAISHA 发明人 YAMASHITA TOSHIHIRO;TAKAI YASUYOSHI;IZAWA HIROSHI
分类号 H01L21/285;H01B13/00;H01L21/203;H01L31/0224;H01L31/04;(IPC1-7):C23C14/34;H01L21/302;H01L21/461 主分类号 H01L21/285
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