Resistive memory for data storage devices

摘要

Resistive memory elements and arrays for data storage devices are disclosed. An exemplar resistive memory element generally has a first conductive structure and a second conductive structure, each of the conductive structures having a width of less than 1lambda, anti-fuse material on each conductive structure, and conductive material on the anti-fuse material such that anti-fuse material is interposed between each conductive structure and the conductive material.