发明名称 |
Interface void monitoring in a damascene process |
摘要 |
For determining the quality of interconnections in integrated circuits, especially in damascene applications, a method of monitoring voids is disclosed, wherein a barrier metal layer is directly deposited on a planarized metal to provide a large-area surface that is not required to be destroyed for further analysis of the interface between the metal and the barrier metal layer. The analysis may be carried out by employing an electron microscope operated in a back-scatter mode.
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申请公布号 |
US6716650(B2) |
申请公布日期 |
2004.04.06 |
申请号 |
US20020121122 |
申请日期 |
2002.04.11 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
LANGER ECKHARD;KOSCHINSKY FRANK;KAHLERT VOLKER;HUEBLER PETER |
分类号 |
H01L21/768;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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