METHOD OF FORMING MULTILAYER METAL OF SEMICONDUCTOR DEVICE USING IMPROVED INTERMETAL DIELECTRIC

摘要

PURPOSE: A method of forming a multilayer metal of a semiconductor device is provided to improve the insulation and flatness of an intermetal dielectric by performing repeatedly an oxide depositing process and an etching process until a space between metal films is completely filled with oxide. CONSTITUTION: A plurality of metal lines(13) are formed on a silicon substrate(11) via an insulating layer(12). An oxide layer(14) is deposited along the upper surface of the resultant structure. A dry-etching process is mainly performed for the oxide layer on each metal line. A space between the metal lines is completely filled with oxide by performing repeatedly the oxide depositing process and the dry-etching process.