| 摘要 |
<p>An object is to obtain a semiconductor production device, a method of adjusting its internal pressure and a method of processing an object of processing which can prevent adhesion of particles to an object of processing. The amount of gas in a cassette chamber (1) is adjusted to bring the internal pressure in the cassette chamber (1) close to atmospheric pressure. Next, on the basis of the pressure difference between atmospheric pressure and the internal pressure gas is gradually moved through gas discharge means (Ta, V13, Tb, Tc) between the atmosphere and the cassette chamber (1) so that the internal pressure becomes equal to the atmospheric pressure. Then a gate (G1) is opened/closed to convey an object of processing between the cassette chamber (1) and the atmosphere. Hence, no flow of gas is caused between the processing chamber and the atmosphere when the gate (G1) is opened/closed, which prevents adhesion of particles to the object of processing.</p> |
