| 发明名称 |
IMPROVED HIGH K-DIELECTRICS USING NICKEL SILICIDE |
| 摘要 |
A method for preventing the thermal decomposition of a high-K dielectric layer of a gate electrode during the formation of a metal silicide on the gate electrode by using nickel as the metal component of the silicide.
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| 申请公布号 |
KR20040029119(A) |
申请公布日期 |
2004.04.03 |
| 申请号 |
KR20047003041 |
申请日期 |
2002.04.05 |
| 申请人 |
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发明人 |
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| 分类号 |
H01L21/336;H01L21/28;H01L29/49;H01L29/51 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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