ORGANIC GATE ISOLATING LAYER AND ORGANIC THIN FILM TRANSISTOR USING THE SAME

摘要

PURPOSE: An organic gate isolating layer and an organic TFT(Thin Film Transistor) using the same are provided to be capable of considerably increasing the grain size of an organic active layer and electric charge mobility. CONSTITUTION: An organic TFT is provided with a substrate(1), a gate electrode(2) formed at the predetermined upper portion of the substrate, and an organic gate isolating layer(3) formed at the upper portion of the resultant structure. The organic TFT further includes an organic active layer(6) formed on the organic gate isolating layer, and a source and drain electrode(4,5) formed at the upper portion of the resultant structure. At this time, the organic gate isolating layer is formed by using predetermined chemical equations. Preferably, the organic active layer is made of one selected from a group consisting of pentacene, copper phthalocyanine, polythiophene, polyaniline, polyacetylene, polypyrrole, and polyphenylene vinylene.