GALLIUM-NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To obtain a gallium-nitride-based semiconductor light emitting element wherein it stands a high temperature when forming gallium nitride and can form a light emitting layer having a high degree of crystallinity.

SOLUTION: The gallium-nitride-based semiconductor light emitting element has a light emitting layer 400 made of a gallium-nitride-based compound semiconductor which is formed above a silicon substrate 100. Further, a silicon carbide heteroepitaxial layer 200 is formed between the silicon substrate 100 and the light emitting layer 400.

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