| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing an optical semiconductor element that serves as a means for forming a connecting electrode consisting of an n-electrode and a p-electrode of the same material, which dispenses with a large film-forming device, ensures a minimum manufacturing cost, and prevents electrode failures or the like. <P>SOLUTION: The method comprises the processes of; providing a plated film containing basis metal, which can be deposited with an electroless plating film, at least on a portion of the surface of either a p-type semiconductor layer or an n-type semiconductor layer; and forming one connecting electrode for covering the plating-grown film by electroless plating, while forming at the same time the other connecting electrode on the surface of the other semiconductor layer. <P>COPYRIGHT: (C)2004,JPO |
