| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a laser beam machining apparatus and a laser beam machining method for achieving excellent machining quality. <P>SOLUTION: A control device 3 radiates pulse laser beams on a predetermined thin film removing area (an area to be machined) on the surface of a wafer W by controlling: a laser beam oscillator 21 and a deflector 23 to scan pulse laser beams radiated onto a surface of the wafer W in the X-axis direction; and by also controlling an XY drive mechanism 12 to move the wafer W in the Y-axis direction for each wafer stage 1. While controlling the XY drive mechanism 12, the laser beam oscillator 21 and the deflector 23, the control device further controls an intensity modulator 22 to modulate the intensity of the pulse laser beams oscillated from the laser beam oscillator 21 so that the pulse laser beam intensity distribution of the pulse laser beams radiated onto the thin film removing area is appropriate for the shape of the thin film removing area, the material of a surface thin film to be removed, and the material of a thin film immediately under the surface thin film (a substrate thin film). <P>COPYRIGHT: (C)2004,JPO</p> |
