| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To shorten an erase/program access time of one time. <P>SOLUTION: A voltage generating circuit used for a nonvolatile semiconductor memory device having a memory cell array constituted of a plurality of nonvolatile memory elements is provided with a boosting circuit having at least a first boosting section boosting power source voltage and outputting the first boosting voltage in accordance with a program mode or an erase mode, and a second boosting section outputting second boosting voltage being different from the first boosting voltage in accordance with a verify-mode. Also, the device is provided with a control voltage generating circuit generating voltage corresponding to a program mode based on the first boosting voltage in the program mode, generating voltage corresponding to an erase-mode based on the first boosting voltage in the erase-mode, and generating voltage corresponding to a verify-mode based on the second boosting voltage in the verify-mode. <P>COPYRIGHT: (C)2004,JPO</p> |
