| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing composition to be used in a CMP process of a semiconductor device with a copper layer, a barrier layer of a tantalum compound and an insulating layer of SiO<SB>2</SB>, showing a sufficiently large polishing rate of the tantalum compound compared with that of the copper and essentially little polishing of SiO<SB>2</SB>. <P>SOLUTION: The polishing composition is produced by mixing a colloidal silica with a mean particle diameter of 30 nm of a primary particle and a poly(methyl methacrylate) with a mean particle diameter of 30 nm as an abrasive material, oxalic acid, hydrogen peroxide, and benzotriazole so as to have a concentration as shown in Table 1 with ion exchanged water filtered with a cartridge filter with 0.5μm, and stirring by a high speed homogenizer to disperse it homogeneously. <P>COPYRIGHT: (C)2004,JPO</p> |
