SEMICONDUCTOR LASER AND SEMICONDUCTOR LASER MODULE

摘要

PROBLEM TO BE SOLVED: To realize a proper bond of an optical system, etc. having an optical fiber and a lens to a semiconductor laser by effectively reducing an overall width of a half value of a far-field image of a longitudinal direction of an irradiating light without extremely deteriorating essential characteristics of the semiconductor laser and to improve high output operation characteristics of the semiconductor laser itself. SOLUTION: This semiconductor laser includes a first conductivity type first clad layer, a first conductivity type second clad layer, an active layer structure, a second conductivity type second clad layer, and a second conductivity type first clad layer sequentially provided in this order on a substrate showing first conductivity type with an oscillation wavelengthλ(nm) allowed to propagate only in a basic mode with respect to a longitudinal direction, a main peak of a highest intensity IVmainand two sub-peaks of maximum intensities IVsub-and IVsub+of the maximum intensities exists in a far-field image (flip-flop photovoltaic voltage) of a direction perpendicular to the substrate, and 0Vsub/IVmain<0.5 (IVsubis one having higher intensity of the IVsub-and IVsub+) is set. COPYRIGHT: (C)2004,JPO