| 摘要 |
PROBLEM TO BE SOLVED: To provide a conductive part in forming an insulation film of a magnetic gap to be formed on a magnetic shield in the manufacturing process of a magnetroresistance effect head element and to provide a process of forming a magnetroresistance effect film. SOLUTION: The resistance between the magnetic shield 3 and a magnetroresistance effect element 5 is set (by a short-circuit pattern 28) higher than a magnetroresistance effect element resistance value to the extent that influences upon a shunt current into the magnetic shield side can be ignored. For example, by setting a resistance value between the magnetic shield and the magnetic resistance effect element more than a hundred times as high as an element magnetic resistance value, the shunt current into the magnetic shield side is suppressed less than 1%. Also, by forming the short-circuit pattern 28 with a single line, the shunt current into the magnetic shield side is eliminated and influences upon the magnetroresistance effect element value are avoided. COPYRIGHT: (C)2004,JPO
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