| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film magnetic memory device that can efficiently and reliably write and read the program information with a small number of memory cells. SOLUTION: It includes a plurality of program cells to store in bit units the program data each constituting information. Each program cell has a magnetic memory having first and second electric resistances for the two magnetizing directions, a driver circuit to irreversibly fix the resistance of the magnetic memory in the program cells at the third resistance, and a sense driver circuit to check whether the magnetic memory in the program cell has the first or second resistance or whether it has one of the first or second or third resistance. COPYRIGHT: (C)2004,JPO
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