| 摘要 |
PROBLEM TO BE SOLVED: To provide a deposition system and deposition method constituted in such a manner that the deposition of thin films can be performed by a plasma enhanced chemical vapor deposition process while the generation of particles on the inside surface of a hollow vessel is extremely minimized. SOLUTION: The hollow vessel for forming the thin films is arranged in a deposition chamber and the interior of the deposition chamber including the interior of the hollow chamber is maintained under specified reduced pressure from an air exit disposed at the bottom closure of the deposition chamber. Gaseous raw materials are introduced in this state from a gaseous raw material introducing pipe into the hollow vessel and thereafter high frequencies are impressed to the gaseous raw materials to convert the raw materials to a plasma, thereby depositing the thin films on the inside surface of the hollow vessel. Ionized air is then introduced into the deposition chamber from the gas introducing pipe to restore the atmosphere pressure in the deposition chamber including the interior of the hollow vessel while removing the particles sticking to the inside surface etc., of the hollow vessel and the deposition chamber. COPYRIGHT: (C)2004,JPO
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