METHOD OF FORMING CONTACT HOLE AND LIQUID CRYSTAL DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a contact hole which can reduce the contact resistance of the hole and improve its throughput.

SOLUTION: This method of forming the contact hole 10 in the gate insulating film 3 covering the gate electrode wiring film (conductive film) 2 provided on an insulating substrate 1 comprises a first etching step of performing etching under a process gas pressure lower than 20 Pa and a second etching step of performing etching with RF power which is lower than that of the dry etching performed in the first etching step, preferably, with RF power of 0.05-0.23 W/cm2expressed in terms of a unit area under a gas pressure lower than 20 Pa.

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