| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device as a bipolar transistor which ensures remarkable improvement in high frequency characteristics by effectively lowering the base resistance while suppressing parasitic capacitance between the collector and the base, and to provide a method for manufacturing the same. SOLUTION: The semiconductor device is provided with a collector layer (1) having a protrusion, an insulator layer (4) provided around the protrusion for embedding it, a base layer (9) located on the protrusion, a base electrode (5) which is connected to a portion of the upper surface of the base layer (9) and to its side face, and an emitter region (17) which is provided selectively in the upper surface of the base layer (9), apart from the base electrode (5). COPYRIGHT: (C)2004,JPO
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