发明名称 ION DOPING DEVICE AND POROUS ELECTRODE FOR THE SAME
摘要 PROBLEM TO BE SOLVED: To suppress variations of ion injection amounts in a narrow range in a direction orthogonal to the scanning direction of a substrate in an ion doping device. SOLUTION: The device emits an ion beam derived from a porous electrode 200 with many electrode holes 210 to a substrate 300 to be scanned. Each electrode hole 210 in electrode hole groupsα,β,γcomposed of a plurality of electrode holes 210 is arranged deviating in position from a direction Y orthogonal to the scanning direction X of the substrate 300 so as to make beam injection amounts to the substrate 300 from the electrode hole groupsα,β,γuniform. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004103313(A) 申请公布日期 2004.04.02
申请号 JP20020261139 申请日期 2002.09.06
申请人 SHARP CORP 发明人 YAMAUCHI TETSUYA
分类号 C23C14/48;H01J27/02;H01J37/08;H01J37/317;H01L21/265;(IPC1-7):H01J37/317 主分类号 C23C14/48
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