SEED CRYSTAL FOR SILICON CARBIDE SINGLE CRYSTAL GROWTH, SILICON CARBIDE SINGLE CRYSTAL INGOT AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a low defect large diameter single crystal silicon carbide wafer at high yield. SOLUTION: The silicon carbide single crystal ingot, with which the high quality silicon carbide single crystal wafer is manufactured at high yield by using silicon carbide single crystal having≥40 mm diameter and the plane orientation making a prescribed off angle with ä0001} plane as the seed crystal in the growth of silicon carbide single crystal by a sublimation re-crystallization method using the seed crystal, is obtained. COPYRIGHT: (C)2004,JPO