| 摘要 |
PROBLEM TO BE SOLVED: To reduce contact resistance between wires and to reduce its variance. SOLUTION: A method includes the stages of forming a 1st conductive film 13 on a semiconductor substrate 11, forming an insulating film 14 on a 1st conductive film 13, forming a resist film 15 on the insulating film 14, forming a hole reaching the 1st conductive film 13 in the insulating film 14 by using the resist film 15 as a mask, forming an oxidation preventing layer on the surface of the 1st conductive film 13, removing the resist film 15, removing the oxidation preventing layer, and forming a 2nd conductive film 16 on the 1st conductive film 13. COPYRIGHT: (C)2004,JPO
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