| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase data read operation speed in a thin film magnetic material storage device for performing a data read operation only by accessing a selection memory cell. <P>SOLUTION: In a single data read operation, data read of stored data of each of before and after applying the prescribed data write magnetic field to a selection memory cell is performed, and data read is performed in accordance with comparison of voltage levels corresponding to each data read. Also, data read operations before and after applying a data write magnetic field are performed using read-modify-write. Thereby, influence such as offset or the like caused by dispersion of manufacturing in each circuit constituting a data reading path is prevented, data read operations are made highly accurately, and high speed data read operations are performed. <P>COPYRIGHT: (C)2004,JPO |
