| 摘要 |
PROBLEM TO BE SOLVED: To manufacture an insulated gate bipolar transistor having a thin device thickness while a doping profile of a field stop layer or a collector layer is controlled. SOLUTION: After an n-type impurity is ion-injected to form the field stop layer on the rear surface of an n-type FZ wafer 41, a silicon-on-insulator support substrate 42 is adhered to the rear surface of the wafer 41. The surface of the wafer 41 is cut to reduce the thickness of the wafer to a desired thickness, and thereafter a surface structure 44 of the insulated gate bipolar transistor is manufactured on the surface of the wafer. The n-type impurity injected before the wafer is adhered is diffused by a heat history when the structure 44 is manufactured to form a deeper field stop layer. After the substrate 44 is removed, a p-type impurity is ion-injected to form the collector layer on the rear surface of the substrate 42, and diffused by heat treatment to form the collector layer. Finally, an ohmic electrode 45 as a collector electrode is formed on the rear surface of the wafer. COPYRIGHT: (C)2004,JPO
|
