| 摘要 |
PROBLEM TO BE SOLVED: To obtain a system for manufacturing a semiconductor in which an epitaxial layer can be formed with extremely high in-plane uniformity in film thickness. SOLUTION: A rotating planar susceptor 3 is arranged with a plurality of substrates 4 in the circumferential direction and supported while directing the lower surface, i.e. the growing surface, thereof toward a gas channel side and material gas is supplied in the diametral direction in order to grow a semiconductor crystal epitaxially on the heated substrate 4 by metal organic vapor phase epitaxy. In such a system for manufacturing a semiconductor, heating means 21 and 22 for imparting temperature distribution intentionally to the substrates 4 in the diametral direction of the susceptor are provided and such temperature distribution as increasing from the outer circumferential side toward the inner circumferential side of the susceptor is formed by the heating means 21 and 22. COPYRIGHT: (C)2004,JPO
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