| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming an insulating film of a metal oxide on a single crystal silicon substrate while eliminating strain, crystal defect and irregularities in the lattice structure in the vicinity of an interface to a substrate. SOLUTION: The method for forming an insulating film of an oxide of a substance contained in a first reaction product on a substrate repeats a first process for adsorbing the first reaction product to the treated surface of the single crystal silicon substrate (step S6), and a second process for adsorbing a second reaction product containing oxygen to the treated surface of the substrate (step S7). In the first process, a reaction product containing a metal (reaction product containing Me) and a reaction product containing silicon (reaction product containing Si) are adsorbed as the first reaction product to the treated surface, and the ratio of the reaction product containing Si is decreased stepwise as repetition of the processes advances. COPYRIGHT: (C)2004,JPO
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