| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor thermal treatment apparatus which is capable of restraining a reactive gas from being decomposed as the gas comes into contact with an object other than a semiconductor substrate, and of making the reactive gas reacting on the surface of the semiconductor substrate nearly uniform in concentration throughout the surface of the semiconductor substrate. SOLUTION: A shower head is used for feeding the reactive gas on the surface of the semiconductor substrate as the gas is kept uniform in concentration through the surface of the substrate and for exhausting the reactive gas. Gas feed/exhaust hole units each composed of reactive gas feed holes and reactive gas exhaust holes are provided on the shower head with equal intervals, a cooling means is provided to the shower head, a feed gas storage region and an exhaust gas storage region are provided inside the shower head, the feed gas storage region is connected to the reactive gas feed holes with feed capillaries, and the exhaust gas storage region is connected to the reaction gas exhaust holes with exhaust capillaries. COPYRIGHT: (C)2004,JPO
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