| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an acid for a barrier metal polishing solution in which a barrier metal layer can be worked at a practical speed with the same component as the polishing solution used for polishing a wiring metal layer as the polishing solution, when excess wiring metal layer and barrier metal layer are polished and flattened by a chemimechanical technique, in a method for damascene wiring including the steps of forming a groove on the insulation layer formed on a semiconductor substrate, coating the surface of the groove with the barrier metal layer, and embedding the groove with the metal layer for wirings and to provide the polishing solution for the barrier metal. <P>SOLUTION: The acid for the barrier metal polishing solution contains a pyrophosphoric acid, triphosphoric acid, and a condensed phosphate, such as, salts, etc. of these acids. The polishing solution for the barrier metal is made of a slurry obtained by mixing a periodate, polishing abrasive particles and a reaction inhibitor with this condensed phosphate and having a pH of 3-8. <P>COPYRIGHT: (C)2004,JPO</p> |
