| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of MOS transistors that are formed together with a capacitor and have gate insulating films of which thicknesses are different from each other. SOLUTION: On a substrate, a field region that delimits a first transistor region, a capacitor region, and a second transistor region is formed. A first gate stack is formed in the first transistor region, while the lower electrode of a capacitor is formed in the capacitor region. Next, the upper electrode of the capacitor is formed on a dielectric film, interposed on the lower electrode while a second gate stack is formed in the second transistor region. COPYRIGHT: (C)2004,JPO
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