| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which improves short-circuit resistance in a load without increasing an on-voltage. SOLUTION: The semiconductor device is provided with; a first main electrode (9); a second main electrode (10); a first semiconductor base region (1) of a first conduction type; a second semiconductor base region (7) of a second conduction type which is arranged adjacent to the region (1); a first semiconductor region (8) of the first conduction type which is arranged in the region (7) connected to the main electrode (9); a gate electrode (6) which is arranged adjacent to the region (8), the region (7) and the region (1) through an insulating film (5); and a second semiconductor region (12) of the second conduction type which is arranged in the region (1) adjacent to the gate electrode (6) through the insulating film (5). COPYRIGHT: (C)2004,JPO
|
