| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging element enabling visible and infrared ray imaging at low costs, and to contrive miniaturization. SOLUTION: An infrared ray receiving layer 13 is formed on the back of a silicon substrate 10 formed with a PN junction photodiode on a surface, and carriers are produced by the infrared ray passing inside the substrate 10. In a visible ray imaging mode, the surface of the substrate 10 near an N-type area 11 is short-circuited to a lower surface of the infrared ray receiving layer 13, and the entrance of the carriers into a cavity layer 12 is restricted. In an infrared ray imaging mode, the cavity layer 12 is enlarged by applying a negative voltage to a lower surface of the infrared ray receiving layer 13, and the carriers generated in the infrared ray receiving layer 13 are promoted to enter the cavity layer 12. The carriers (electrons) entered the cavity layer 12 are promptly moved to the N-type area 11 by an electric field and are excluded to the outside. Thus, it is possible to manufacture an infrared charge-coupled device by a production process at the substantially same degree as a conventional Si charge-coupled device, and to curtail the costs fairly with a small device size. COPYRIGHT: (C)2004,JPO
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