发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit which admits signals of a potential higher than the power-supply voltage supplied to an interface circuit and the maximum rated voltage admitted by the gate electrode of a transistor constituting the interface circuit even in a non-access mode. SOLUTION: The gate voltage impressed upon the gate electrode of a transfer gate which is connected between an external input terminal and the input terminal of an input buffer to transmit external signals inputted from the external input terminal to the input terminal of the input buffer is generated by means of a gate voltage control circuit. In an access mode, the gate voltage control circuit outputs a voltage generated on the basis of a relatively high first voltage impressed upon this semiconductor integrated circuit as a power-supply voltage as the gate voltage. In the non-access mode, the control circuit outputs a voltage generated on the basis of a relatively low second voltage impressed upon this semiconductor integrated circuit as a power-supply voltage as the gate voltage. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004104570(A) 申请公布日期 2004.04.02
申请号 JP20020265369 申请日期 2002.09.11
申请人 SEIKO EPSON CORP 发明人 SEKI HIROSHI
分类号 H01L27/04;H01L21/822;H03K17/687;H03K19/00;H03K19/0175;H03K19/0185;(IPC1-7):H03K19/017 主分类号 H01L27/04
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