| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device that has a small layout area and can quickly write the signal of the memory node in a magnetoresistive element. <P>SOLUTION: The MRAM memory cell 1 has a N channel MOS transistor 9-12 to connect the program line Pl of the tunnel magnetoresistive element 13, 14 between the respective memory nodes N1, N2 and the ground potential GND line and write the signals of the memory nodes N1, N2 in the magnetoresistive elements 13, 14 following the write permission signal WE turning to a H level.The signals can be written more quickly in the tunnel magnetoresistive element 13, 14 than in a conventional method which writes in the tunnel magnetoresistive element through a writing circuit and a writing bit pair wire after once reading the signal in the memory node N1, N2. <P>COPYRIGHT: (C)2004,JPO |
