| 摘要 |
PROBLEM TO BE SOLVED: To provide a transparent electroconductive film of which production cost is low and optical transparency is excellent, and which has a low specific-resistance value, and is superior in etching characteristics, and its forming method. SOLUTION: This is the forming method of the transparent electroconductive film wherein a gas is introduced into a discharge space under the atmospheric pressure or its neighboring pressure, and wherein the substrate is exposed to the gas made in a plasma state by applying an electric field, and wherein the transparent electroconductive film containing two or more kinds of metal dopants is formed. COPYRIGHT: (C)2004,JPO
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