发明名称 FLIP CHIP GUNN DIODE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a flip chip Gunn diode improved in a heat radiating efficiency and reduced in a thermal resistance. <P>SOLUTION: An insulating film is formed on a recessed region formed around an anode electrode while penetrating an active layer and a second contact layer, then, a heat conductive layer on the insulating film by filling a thermably conductive material(gold, silver, copper or the like) is connected to a conductive projection (bump) to efficiently dissipate heat generated in the active layer. In addition to the above-described means, the conductive projection (bump) connected to the anode electrode and a cathode electrode is connected further to the heat conductive layer to improve a heat radiating efficiency. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004103818(A) 申请公布日期 2004.04.02
申请号 JP20020263535 申请日期 2002.09.10
申请人 NEW JAPAN RADIO CO LTD 发明人 KAWAGUCHI KIYOSHI
分类号 H01L47/02;H01L21/60;(IPC1-7):H01L47/02 主分类号 H01L47/02
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