| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ZnO oxide semiconductor light emitting element superior in a light emission characteristic. <P>SOLUTION: In the oxide semiconductor light emitting element, an n-type Mg<SB>x</SB>Zn<SB>1-x</SB>O cladding layer, a ZnO semiconductor active layer, a p-type Mg<SB>y</SB>Zn<SB>1-y</SB>O cladding layer, and a p-type ZnO contact layer, are formed on a substrate. Only donor impurities are doped on the n-type Mg<SB>x</SB>Zn<SB>1-x</SB>O cladding layer, and only acceptor impurities are doped on the p-type Mg<SB>y</SB>Zn<SB>1-y</SB>O cladding layer. A Mg composition ratio (x) of the n-type Mg<SB>x</SB>Zn<SB>1-x</SB>O cladding layer and a Mg composition ratio (y) of the p-type Mg<SB>y</SB>Zn<SB>1-y</SB>O cladding layer are in a range of 0.2 to 0.35, and film thickness is in a range of 0.5 to 2μm. <P>COPYRIGHT: (C)2004,JPO |
