发明名称 |
APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To eliminate a deviation of a central position of a wafer at a central position of a plasma distribution, generated without replacing an upper electrode even when an interval between opposed electrodes of a plasma device is changed. SOLUTION: An apparatus for manufacturing a semiconductor device includes a plasma reaction chamber 11, the upper electrode 13 provided at an upper part of the chamber 11, a lower electrode 15 provided oppositely to the electrode 13 in the chamber 11 to hold the wafer 30 on its main surface, and a support member 23 for regulating an interval between the electrode 13 and the electrode 15. A plurality of holes 13a for passing gas to be introduced into the chamber 11 from an exterior are provided at the electrode 13. A hole blocking implement 24 for selectively opening or closing the plurality of the holes 13a provided at the upper electrode is provided in the chamber 11. COPYRIGHT: (C)2004,JPO
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申请公布号 |
JP2004103776(A) |
申请公布日期 |
2004.04.02 |
申请号 |
JP20020262719 |
申请日期 |
2002.09.09 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD;RENESAS TECHNOLOGY CORP |
发明人 |
KAWASHIMA KOICHI;YAMANAKA MICHINARI;TERATANI AKIYOSHI;SAKAMORI SHIGENORI;FUJIWARA NOBUO |
分类号 |
C23C16/455;H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
C23C16/455 |
代理机构 |
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