| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor thin film depositing system and method for forming the gate insulating film of an FET, or the like, on a semiconductor wafer, or the like, in which the film is formed while eliminating defects and impurities by controlling the quantity of a material gas being supplied to a film deposition chamber such that the material gas is not supplied excessively nor deficiently. SOLUTION: The system for depositing a thin film on the surface of a semiconductor comprises a means for supplying a material gas, a chamber for depositing a film through the chemical reaction of the material gas, and a means for exhausting the material gas in the film deposition chamber wherein a gas monitoring means is provided between the film deposition chamber and the exhausting means. COPYRIGHT: (C)2004,JPO
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