| 摘要 |
PROBLEM TO BE SOLVED: To reduce the measuring time for measuring the amount of displacement between a plurality of layers of patterns formed on a semiconductor wafer using LAMU marks. SOLUTION: Displacement in alignment of positions to form patterns is inspected with the single measurement and analysis of contrast curves CX2, CY2 by the combination of a set of LAMU mark LA1, LC and LE by forming the LAMU mark LC to a region surrounding the LAMU mark LA1 and forming the LAMU mark LE to a region surrounding the LAMU mark LC. COPYRIGHT: (C)2004,JPO |
