| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film magnetic material memory device in which the leak currents produced in non-selected MTJ (Magnetic Tunnel Junction) memory cells are suppressed and which has a high data readout margin. SOLUTION: The MTJ memory cell MC has access transistors ATR which is turned on in response to the activation of corresponding word lines and tunnel magneto-resistive elements TMR whose electric resistance values are varied according to stored data. The sources of the access transistors ATR are connected to source lines SL1 to Sln for for supplying a ground voltage GND. The respective access transistors ATR comprise MOS transistors having the threshold voltage greater than that of other MOS transistors TL formed on the same chip in order to suppress the off leak currents in the non-selected access transistors. COPYRIGHT: (C)2004,JPO |
