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发明名称
有机金属化学气相沈积反应器之承受器
摘要
揭示一种承受器,其用于在有机金属化学气相沉积(MOCVD)反应器中,在半导体晶圆上生长磊晶层时托住晶圆。该承受器包含一由具有高温低热传导度之材料制成之基本结构,且具有一或多个板孔以放入热传塞(heattransferplug)。该塞系由具有高温高热传导度之材料制成以传送热至半导体晶圆。也揭示一种利用根据本发明之承受器之有机金属化学气相沉积反应器。
申请公布号
TW200405394
申请公布日期
2004.04.01
申请号
TW092112833
申请日期
2003.05.12
申请人
克立公司
发明人
守治中村;史帝芬 丹巴尔斯;马克司 巴斯;麦克 高德
分类号
H01L21/00
主分类号
H01L21/00
代理机构
代理人
陈长文
主权项
地址
美国
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