发明名称 |
Short-circuit cut-off circuit for MOSFET switch, has device which places gate voltage of MOSFET switch at zero volts for short time to effect complete switch-off |
摘要 |
The gate of the MOSFET switch (T1) is driven by an integrated circuit (1), and the source and drain are connected to a load (RL) and voltage source (Ub) respectively. The gate of the MOSFET switch is connected via a switch (S1) to a device (12) which places the gate voltage of the MOSFET at 0 V for a short time, to effect a complete switch-off of the MOSFET switch.
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申请公布号 |
DE10243571(A1) |
申请公布日期 |
2004.04.01 |
申请号 |
DE20021043571 |
申请日期 |
2002.09.19 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
TIHANYI, JENOE |
分类号 |
H03K17/08;H03K17/082;(IPC1-7):H03K17/082;H02H3/08;H02H7/20 |
主分类号 |
H03K17/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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