发明名称 ALUMINUM NITRIDE SINTERED COMPACT
摘要 <p>An aluminum nitride sintered compact comprises grains having an average grain diameter (D50) of 0.1 to 2.5 mum, has a pore area ratio of 1 X 10&lt;-7&gt; or less, has a pore density of 0.05 pieces/mm&lt;2&gt; or less with respect to pores having a diameter of 1 mum or more, and a Vickers hardness in the range of 14 to 17 GPa. The aluminum nitride sintered compact is comprised of grains having a relatively small diameter and has a markedly low pore density, and thus is excellent in strength characteristics and in the capability of being formed into a mirror surface and is useful, in particular, as a material for a circuit board having a surface on which a fine wiring pattern is formed.</p>
申请公布号 WO2004026790(A1) 申请公布日期 2004.04.01
申请号 WO2003JP11832 申请日期 2003.09.17
申请人 TOKUYAMA CORPORATION;KANECHIKA, YUKIHIRO;MIKI, TOSHIKATSU;KAI, AYAKO 发明人 KANECHIKA, YUKIHIRO;MIKI, TOSHIKATSU;KAI, AYAKO
分类号 C04B35/581;C04B35/634;C04B35/645;H05K1/03;(IPC1-7):C04B35/58;C04B35/64 主分类号 C04B35/581
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