发明名称 |
ALUMINUM NITRIDE SINTERED COMPACT |
摘要 |
<p>An aluminum nitride sintered compact comprises grains having an average grain diameter (D50) of 0.1 to 2.5 mum, has a pore area ratio of 1 X 10<-7> or less, has a pore density of 0.05 pieces/mm<2> or less with respect to pores having a diameter of 1 mum or more, and a Vickers hardness in the range of 14 to 17 GPa. The aluminum nitride sintered compact is comprised of grains having a relatively small diameter and has a markedly low pore density, and thus is excellent in strength characteristics and in the capability of being formed into a mirror surface and is useful, in particular, as a material for a circuit board having a surface on which a fine wiring pattern is formed.</p> |
申请公布号 |
WO2004026790(A1) |
申请公布日期 |
2004.04.01 |
申请号 |
WO2003JP11832 |
申请日期 |
2003.09.17 |
申请人 |
TOKUYAMA CORPORATION;KANECHIKA, YUKIHIRO;MIKI, TOSHIKATSU;KAI, AYAKO |
发明人 |
KANECHIKA, YUKIHIRO;MIKI, TOSHIKATSU;KAI, AYAKO |
分类号 |
C04B35/581;C04B35/634;C04B35/645;H05K1/03;(IPC1-7):C04B35/58;C04B35/64 |
主分类号 |
C04B35/581 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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