发明名称 |
Light emititng device |
摘要 |
According to the invention, a Group III nitride compound semiconductor light-emitting element is provided with a light-emitting layer comprising two layers of different in ratio of AlGaInN composition, and emitting light with an emission peak wavelength in an ultraviolet region and light with an emission peak wavelength in a visible region. The light-emitting element and a fluorescent material excited by light in the ultraviolet region are combined to configure a light emitting device.
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申请公布号 |
US2004061115(A1) |
申请公布日期 |
2004.04.01 |
申请号 |
US20030250772 |
申请日期 |
2003.07.09 |
申请人 |
KOZAWA TAKAHIRO;SHIBATA NAOKI |
发明人 |
KOZAWA TAKAHIRO;SHIBATA NAOKI |
分类号 |
H01L27/15;H01L33/10;H01L33/32;H01L33/50;H01L33/52;H01L33/62;(IPC1-7):H01L27/15;H01L31/12;H01L33/00 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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