| 摘要 |
A driving circuit having a p-n-p transistor and an n-p-n transistor which are connected in series between a high-voltage side source terminal (VB) and a ground terminal, and a plurality of inverters provided on a path through which an input signal is transmitted to both the transistors. One of both the transistors is turned on, and the other is turned off, by means of the inverters to bring an output terminal connected between both the transistors, to any of a high voltage level and a low voltage level. The inverters are each constituted of a bipolar transistor which is element-isolated by silicon oxide layers in an n-silicon layer, and, in addition to inverters each having in the n-silicon layer a p<+> substrate region for drawing out electric charges, inverters which do not have the p<+> substrate region are provided in combination with the former.
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