发明名称 NONVOLATILE SEMICONDUCTOR MEMORY
摘要 A bit line is connected to a data circuit for use in a program/read time. The data circuit includes first, second, and third data storage units. The first data storage unit is connected to the bit line. A first data transfer circuit is connected between the first and third data storage units. A second data transfer circuit is connected between the second and third data storage units. The second data storage unit has a function of forcibly changing a value of data of the first data storage unit based on the data stored in the second data storage unit.
申请公布号 US2004062077(A1) 申请公布日期 2004.04.01
申请号 US20030373920 申请日期 2003.02.27
申请人 TANAKA TOMOHARU 发明人 TANAKA TOMOHARU
分类号 G11C16/02;G11C11/56;G11C16/04;(IPC1-7):G11C11/34 主分类号 G11C16/02
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