METHOD FOR PROCESSING SEMICONDUCTOR SUBSTRATE

摘要

A method for processing a semiconductor substrate comprises a step wherein a trench (16) is formed in the surface of a substrate (W) by etching the substrate (W) and a step wherein a corner portion (10) of the substrate which is at the entrance of the trench (16) is rounded off by heating the substrate (W). The step of rounding off the corner portion (10) includes a first heat treatment conducted in a hydrogen gas atmosphere wherein the process temperature (T) is 850 °C < T < 1050 °C and the process pressure (P) is 0.01 kpa < P < 30 kpa.