发明名称 |
Floating gate memory fabrication methods comprising a field dielectric etch with a horizontal etch component |
摘要 |
A silicon nitride layer (120) is formed over a semiconductor substrate (104) and patterned to define isolation trenches (130). The trenches are filled with dielectric (210). The nitride layer is removed to expose sidewalls of the trench dielectric (210). The dielectric is etched to recess the sidewalls away from the active areas (132). Then a conductive layer (410) is deposited to form floating gates for nonvolatile memory cells. The recessed portions of the dielectric sidewalls allow the floating gates to be wider at the top. The gate coupling ratio is increased as a result. Other features are also provided.
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申请公布号 |
US2004061165(A1) |
申请公布日期 |
2004.04.01 |
申请号 |
US20020262785 |
申请日期 |
2002.10.01 |
申请人 |
DING YI |
发明人 |
DING YI |
分类号 |
H01L21/28;H01L21/8247;H01L27/115;H01L29/788;(IPC1-7):H01L21/336;H01L29/76 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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