| 发明名称 |
Method and apparatus for an improved deposition shield in a plasma processing system |
| 摘要 |
The present invention presents an improved deposition shield for surrounding a process space in a plasma processing system, wherein the design and fabrication of the deposition shield advantageously provides for a clean processing plasma in the process space with substantially minimal erosion of the deposition shield.
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| 申请公布号 |
US2004060657(A1) |
申请公布日期 |
2004.04.01 |
| 申请号 |
US20020259353 |
申请日期 |
2002.09.30 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
SAIGUSA HIDEHITO;TAKASE TAIRA;MITSUHASHI KOUJI;NAKAYAMA HIROYUKI |
| 分类号 |
H01J37/32;H01L21/205;H01L21/306;H01L21/3065;H05H1/00;(IPC1-7):H01L21/306 |
主分类号 |
H01J37/32 |
| 代理机构 |
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