发明名称 SEMI-CONDUCTOR COMPONENT WITH CONDENSATORS BURIED IN THE SUBSTRATE AND INSULATED COMPONENT LAYER THEREOF
摘要 The invention relates to a semi-conductor substrate and a semi-conductor circuit embodied therein and a production method associated therewith. A plurality of cavities (P) provided with a respective dielectric layer (D) and a capacitor-electrode (E2) are embodied in order to produce capacitors buried in a carrier substrate and an actual semi-conductor component layer (3) is insulated from the carrier substrate (1) by an insulation layer (2).
申请公布号 WO2004027861(A1) 申请公布日期 2004.04.01
申请号 WO2003DE03044 申请日期 2003.09.13
申请人 INFINEON TECHNOLOGIES AG;HOFMANN, FRANZ;LEHMANN, VOLKER;RISCH, LOTHAR;ROESNER, WOLFGANG;SPECHT, MICHAEL 发明人 HOFMANN, FRANZ;LEHMANN, VOLKER;RISCH, LOTHAR;ROESNER, WOLFGANG;SPECHT, MICHAEL
分类号 H01L21/02;H01L21/334;H01L21/8242;H01L21/84;H01L27/108;H01L27/12;H01L29/94 主分类号 H01L21/02
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