| 发明名称 |
Semiconductor element structure, electron emitter and method for fabricating a semiconductor element structure |
| 摘要 |
A mask layer with an opening is formed on a main surface of a silicon substrate, which is exposed in the opening. Then, a hexagonal pyramidal island-shaped portion is formed from a first semiconductor nitride in the opening to complete a semiconductor element structure.
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| 申请公布号 |
US2004061125(A1) |
申请公布日期 |
2004.04.01 |
| 申请号 |
US20030443970 |
申请日期 |
2003.05.23 |
| 申请人 |
NAGOYA UNIVERSITY |
发明人 |
SAWAKI NOBUHIKO;HONDA YOSHIO |
| 分类号 |
H01J1/304;H01J1/308;H01J9/02;H01L21/205;(IPC1-7):H01L33/00 |
主分类号 |
H01J1/304 |
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